MAGNETOELECTRIC RESPONSES IN MULTIFERROIC COMPOSITE THIN FILMS

被引:14
作者
Hu, Ja-Mian
Ma, Jing
Wang, Jing
Li, Zheng
Un, Yuan-Hua
Nan, C. W. [1 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
关键词
Multiferroic; magnetoelectric effect; composite thin film; magnetoelectric devices; memory devices;
D O I
10.1142/S2010135X11000021
中图分类号
O59 [应用物理学];
学科分类号
摘要
Multiferroic composite thin films of ferroelectrics and magnets have attracted ever-increasing interest in most recent years. In this review, magnetoelectric (ME) responses as well as their underlying ME coupling mechanisms in such multiferroic composite thin films are discussed, oriented by their potential applications in novel ME devices. Among them, the direct ME response, i. e., magnetic-field control of polarization, can be exploited for micro-sensor applications (sensing magnetic field, electric current, light, etc.), mainly determined by a strain-mediated coupling interaction. The converse ME response, i. e., electric-field modulation of magnetism, o r ers great opportunities for new potential devices for spintronics and in data storage applications. A series of prototype ME devices based on both direct and converse ME responses have been presented. The review concludes with a remark on the future possibilities and scienti fic challenges in this field.
引用
收藏
页码:1 / 16
页数:16
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