SIMULATION OF N-CHANNEL FIELD-EFFECT TRANSISTORS IN CIRCUIT ANALYSIS OF CMOS CIRCUITS

被引：0
|
作者：
MERCHANT, K [1 ]
机构：
[1] AEG TELEFUNKEN,HEILBRONN,FED REP GER
来源：
NACHRICHTENTECHNISCHE ZEITSCHRIFT | 1975年 / 28卷 / 04期
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中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
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页码：133 / 137
页数：5
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