ON THE THEORY OF DEEP ELECTRONIC IMPURITY STATES IN MANY-VALLEY SEMICONDUCTORS

被引：0

作者：

SAVVINYKH, SK

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1987年 / 141卷 / 01期

关键词：

D O I：

10.1002/pssb.2221410117

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：185 / 190

页数：6

共 9 条

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[3] AN INVESTIGATION OF DEEP-LEVEL WAVEFUNCTIONS WITH ENERGIES NEAR THE BAND EDGES [J].

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[4] DYNAMIC CONDUCTIVITY SINGULARITIES OF A MANY-VALLEY SEMICONDUCTOR IN A QUANTIZING MAGNETIC-FIELD [J].

MAGARILL, LI ;

SAVVINYKH, SK .

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DOW, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :1929-1936

[6] OPTICAL-PROPERTIES OF THE IMPURITY INTERVALLEY MULTIPLET IN GE-TYPE SEMICONDUCTORS IN UNIFORM CONSTANT ELECTRIC-FIELD [J].

SAVVINIKH, SK .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 129 (01) :387-391

[7]

SAVVINIKH SK, 1981, FIZ TVERD TELA, V23, P3717

[8]

SAVVINYKH SK, 1979, FIZ TVERD TELA+, V21, P1673

[9] CHEMICAL TRENDS OF DEEP IMPURITY LEVELS IN COVALENT SEMICONDUCTORS [J].

VOGL, P .

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 :191-219

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