LOW-TEMPERATURE MIGRATION OF LI IONS IN P-GE

被引:0
作者
KASTALSK.AA [1 ]
TASHPULA.BM [1 ]
机构
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源
FIZIKA TVERDOGO TELA | 1974年 / 16卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2779 / 2781
页数:3
相关论文
共 50 条
[11]   Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes [J].
Veinger, A. I. ;
Zabrodskii, A. G. ;
Tisnek, T. V. ;
Goloshchapov, S. I. .
SEMICONDUCTORS, 2011, 45 (10) :1264-1272
[12]   Electrical properties of Al/p-Ge and Al/Methyl Green/p-Ge diodes [J].
Duman, S. ;
Turgut, G. ;
Ozcelik, F. S. ;
Gurbulak, B. .
PHILOSOPHICAL MAGAZINE, 2015, 95 (15) :1646-1655
[13]   INTRABAND PHOTOCONDUCTIVITY IN P-GE [J].
DANISHEVSKII, AM ;
KASTALSK.AA ;
RYVKIN, BS ;
RYVKIN, SM ;
YAROSHETSKII, ID .
JETP LETTERS-USSR, 1969, 10 (10) :302-+
[14]   Device performance of p-Ge MOSFETs at liquid nitrogen temperature [J].
Ohyama, H. ;
Sukizaki, H. ;
Takakura, K. ;
Motoki, M. ;
Matsuo, K. ;
Nakamura, H. ;
Sawada, M. ;
Midorikawa, C. ;
Kuboyama, S. ;
De Jaeger, B. ;
Simoen, E. ;
Claeys, C. .
THIN SOLID FILMS, 2010, 518 (09) :2513-2516
[15]   THE THERMOELECTRIC-POWER OF P-GE AT LOW-TEMPERATURES [J].
KADEN, E ;
GUNTER, HL .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 126 (02) :733-740
[16]   LOW-TEMPERATURE PHOTOLUMINESCENCE OF GE=AS AND GE=GA [J].
CHEN, M ;
SMITH, DL ;
MCGILL, TC .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03) :350-350
[17]   Low-voltage lasing of p-Ge under uniaxial stress [J].
Zobl, R ;
Gornik, E ;
Altukhov, IV ;
Sinis, VP ;
Korolev, KA ;
Kagan, MS .
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 :189-191
[18]   RELAXATION OF HOT HOLES IN P-GE [J].
SARGENT, M .
OPTICS COMMUNICATIONS, 1977, 20 (02) :298-302
[19]   LOW-TEMPERATURE THERMAL CONDUCTIVITY OF P-TYPE GE AND SI [J].
SUZUKI, K ;
MIKOSHIBA, N .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2550-+
[20]   Gain of the mode locked p-Ge laser in the low field region [J].
Hovenier, JN ;
Klaassen, TO ;
Wenckebach, WT ;
Muravjov, AV ;
Pavlov, SG ;
Shastin, VN .
APPLIED PHYSICS LETTERS, 1998, 72 (10) :1140-1142