PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE

被引：146

作者：

PALS, JA ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(74)90157-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1139 / 1145

页数：7

共 23 条

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