ION-IMPLANTED N+ CONTACTS FOR KA BAND GAAS GUNN-EFFECT DIODES

被引：9

作者：

LEE, DH ^{[1
]}

BERENZ, JJ ^{[1
]}

BERNICK, RL ^{[1
]}

机构：

[1] HUGHES RES LABS,3011 MALIBU CANYON RD,MALIBU,CA 90265

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 09期

关键词：

D O I：

10.1049/el:19750145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：189 / 191

页数：3

共 10 条

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[2] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].

HASTY, TE ;

STRATTON, R ;

JONES, EL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4623-+

[3]

HILSUM C, 1972, 4TH P INT S GAAS REL

[4] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J].

HUNSPERGER, RG ;

MARSH, OJ ;

MEAD, CA .

APPLIED PHYSICS LETTERS, 1968, 13 (09) :295-+

[5] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS [J].

HUNSPERGER, RG ;

HIRSCH, N .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :349-353

[6]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7]

NARAYAN SY, 1972, RCA REV, V33, P752

[8] HIGH-FREQUENCY GUNN OSCILLATORS [J].

RUTTAN, TG .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (02) :142-144

[9]

SEIDEL TE, 1969, T METALL SOC AIME, V245, P491

[10]

Young A. B. Y., 1970, Journal of the Physics and Chemistry of Solids, V31, P517, DOI 10.1016/0022-3697(70)90092-2

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