OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON

被引：106

作者：

RAVI, KV ^{[1
]}

VARKER, CJ ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICONDUC PROD DIV,MAT RES LAB,5005 E MCDOWELL RD,PHOENIX,AZ 85008

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：263 / 271

页数：9

共 22 条

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[3] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

DRUM, CM ;

VANGELDE.W .

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[4]

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[5]

HIRSCH PB, 1962, NPL C RELATION STRUC, P440

[6] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].

HSIEH, CM ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1302-1306

[7]

IIZUKA T, 1968, LATTICE DEFECTS SEMI

[8] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN [J].

JACCODINE, RJ ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1966, 8 (01) :29-+

[9] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J].

JOSHI, ML .

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[10]

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