CONDUCTION PROCESSES IN BORON-DOPED AND NITROGEN-DOPED DIAMOND-LIKE CARBON-FILMS PREPARED BY MASS-SEPARATED ION-BEAM DEPOSITION

被引：110

作者：

RONNING, C ^{[1
]}

GRIESMEIER, U ^{[1
]}

GROSS, M ^{[1
]}

HOFSASS, HC ^{[1
]}

DOWNING, RG ^{[1
]}

LAMAZE, GP ^{[1
]}

机构：

[1] NIST,NUCL METHODS GRP,GAITHERSBURG,MD 20899

来源：

关键词：

DIAMOND-LIKE CARBON; DOPING; ELECTRICAL PROPERTIES; ION BEAM GROWTH;

D O I：

10.1016/0925-9635(94)05219-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron- and nitrogen-doped diamond-like amorphous carbon (DLC) films were prepared by alternating direct deposition of low energy mass-separated C-12(+) and dopant ions. Concentration vs. depth profiles for N and B dopants were determined by neutron depth profiling. The measured current-voltage characteristics of these films, which were deposited on polished stainless steel, are explained best by Frenkel-Poole emission for high electric fields. Two different trap states Phi(1) and Phi(2) were found to contribute to the conduction process. At low electric fields our results suggest that conduction is due to variable-range hopping via localized states at the Fermi level. The doped DLC films show a higher electrical conductivity, indicative of an increased density of localized states, rather than a shift in the Fermi level. A diode-like device was prepared, but the measured I-V curves did not indicate that a p-n junction had formed. DLC/Si heterojunctions were also prepared and their current-voltage characteristics are presented and discussed.

引用

页码：666 / 672

页数：7

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