PARTICULATES IN SILICON MOLECULAR-BEAM EPITAXY

被引：2
作者：
BELLAVANCE, D
LIU, J
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期
关键词：
D O I：
10.1116/1.583783
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：751 / 751
页数：1
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