SUPPLEMENTAL MULTILEVEL INTERCONNECTS BY LASER DIRECT WRITING - APPLICATION TO GAAS DIGITAL INTEGRATED-CIRCUITS

被引:33
作者
BLACK, JG
DORAN, SP
ROTHSCHILD, M
EHRLICH, DJ
机构
关键词
D O I
10.1063/1.97993
中图分类号
O59 [应用物理学];
学科分类号
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页码:1016 / 1018
页数:3
相关论文
共 10 条
[1]  
BLACK J, UNPUB
[2]   RAPID LOW-RESISTANCE INTERCONNECTS BY SELECTIVE TUNGSTEN DEPOSITION ON LASER-DIRECT-WRITTEN POLYSILICON [J].
BLACK, JG ;
EHRLICH, DJ ;
SEDLACEK, JHC ;
FEINERMAN, AD ;
BUSTA, HH .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :422-424
[3]  
CHEN CL, 1987, IN PRESS ELECTRON LE
[4]   ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].
DEUTSCH, TF ;
EHRLICH, DJ ;
RATHMAN, DD ;
SILVERSMITH, DJ ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827
[5]   LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF GATE-ARRAY PROTOTYPE CIRCUITS [J].
EHRLICH, DJ ;
TSAO, JY ;
SILVERSMITH, DJ ;
SEDLACEK, JHC ;
MOUNTAIN, RW ;
GRABER, WS .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :32-35
[6]  
EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624
[7]   HIGH-ACCURACY TUNING OF PLANAR MILLIMETER-WAVE CIRCUITS BY LASER PHOTOCHEMICAL ETCHING [J].
EHRLICH, DJ ;
WILLIAMS, DF ;
SEDLACEK, JHC ;
ROTHSCHILD, M ;
SCHWARZ, SE .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) :110-112
[8]   LASER-INDUCED SELECTIVE DEPOSITION OF MICRON-SIZE STRUCTURES ON SILICON [J].
LIU, YS ;
YAKYMYSHYN, CP ;
PHILIPP, HR ;
COLE, HS ;
LEVINSON, LM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1441-1444
[9]   MULTILEVEL INTERCONNECTIONS FOR WAFER SCALE INTEGRATION [J].
MCDONALD, JF ;
STECKL, AJ ;
NEUGEBAUER, CA ;
CARLSON, RO ;
BERGENDAHL, AS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (06) :3127-3138
[10]   EXCIMER LASER ETCHING OF POLYMERS [J].
SRINIVASAN, V ;
SMRTIC, MA ;
BABU, SV .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3861-3867