RADIATION-DAMAGE OF SILICON MICROSTRIP DETECTORS BY 1.5 MEV ELECTRONS AND SYNCHROTRON RADIATION

被引：3

作者：

CHILINGAROV, A ^{[1
]}

DOLBNYA, I ^{[1
]}

KURYLO, S ^{[1
]}

TRUTZSCHLER, K ^{[1
]}

机构：

[1] INST HOCHENERGIEPHYS,BERLIN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 310卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(91)91043-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the radiation hardness of silicon microstrip detectors by exposing them to 1.5 MeV electrons and synchrotron radiation. Observed earlier nonlinear dependence of radiation damage current with dose is confirmed. Room temperature self-annealing is found to have different rate for defects produced by electrons and photons respectively. The surface and bulk contributions to damage current are discussed.

引用

页码：277 / 282

页数：6

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