OBSERVATION OF SUPERHEATING DURING PICOSECOND LASER MELTING

被引：33

作者：

FABRICIUS, N

HERMES, P

VONDERLINDE, D

POSPIESZCZYK, A

STRITZKER, B

机构：

[1] FORSCHUNGSZENTRUM JULICH, EURATOM, INST PLASMAPHYS, D-5170 JULICH 1, FED REP GER

[2] FORSCHUNGSZENTRUM JULICH, INST FESTKOERPERFORSCH, D-5170 JULICH, FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 04期

关键词：

D O I：

10.1016/0038-1098(86)90209-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：239 / 242

页数：4

共 12 条

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[2]

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[3]

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[4] SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS [J].

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[6] PULSED LASER ANNEALING OF GAAS AND SI - COMBINED REFLECTIVITY AND TIME-OF-FLIGHT MEASUREMENTS [J].

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JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3176-3182

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Spaepen F., 1982, Laser annealing of semiconductors, P15

[8] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING [J].

STRITZKER, B ;

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TAGLE, JA .

PHYSICAL REVIEW LETTERS, 1981, 47 (05) :356-358

[9]

Thompson M.O., 1985, MATER RES SOC S P, V35, P181

[10] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION [J].

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