APPLICATION OF LOW-ENERGY ELECTRON-BEAM CURING IN PLASTICS PROCESSING AND COATING TECHNOLOGIES

被引：1
|
作者：
CZVIKOVSZKY, T
机构：
来源：
ISOTOPENPRAXIS | 1985年 / 21卷 / 11期
关键词：
D O I：
10.1080/10256018508623555
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
引用
收藏
页码：379 / 383
页数：5
相关论文
共 50 条
  • [1] APPLICATION OF LOW-ENERGY ELECTRON-BEAM CURING IN PLASTICS PROCESSING AND COATING TECHNOLOGIES
    CZVIKOVSZKY, T
    RADIATION PHYSICS AND CHEMISTRY, 1985, 26 (05): : 547 - 553
  • [2] LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY
    POLASKO, KJ
    YAU, YW
    PEASE, RFW
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 333 : 76 - 82
  • [3] LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY
    POLASKO, KJ
    YAU, YW
    PEASE, RFW
    OPTICAL ENGINEERING, 1983, 22 (02) : 195 - 198
  • [4] LOW-ENERGY ELECTRON-BEAM FACILITIES
    EMANUELSON, RM
    RADIATION PHYSICS AND CHEMISTRY, 1981, 18 (1-2): : 313 - 322
  • [5] LOW-ENERGY ELECTRON-BEAM ENERGY DEPOSITION - COMMENT
    CHADSEY, WL
    GALLOWAY, KF
    PEASE, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 201 - 202
  • [6] Advances in electron-beam processing of fiber-reinforced plastics: An emerging curing technology
    Stern, M
    SAMPE JOURNAL, 2000, 36 (02) : 33 - 38
  • [7] NEW DEVELOPMENTS IN LOW-ENERGY ELECTRON-BEAM TECHNOLOGY
    RODRIGUES, AM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 : 858 - 862
  • [8] INTERCOMPARATIVE STUDY ON LOW-ENERGY ELECTRON-BEAM DOSIMETRY
    TANAKA, R
    SUNAGA, H
    KURIYAMA, I
    MORIUCHI, Y
    RADIATION PHYSICS AND CHEMISTRY, 1989, 33 (05): : 407 - 410
  • [9] LOW-ENERGY PROCESSES INDUCED BY AN ELECTRON-BEAM IN OXYGEN
    FOURNIER, G
    BONNET, J
    BRIDET, J
    FORT, J
    PIGACHE, D
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (02): : 110 - 110
  • [10] Resist processes for low-energy electron-beam lithography
    Schock, K.-D.
    Prins, F.E.
    Strahle, S.
    Kern, D.P.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (06):
12345