THE BOLTZMANN RESISTIVITY OF HEAVILY DOPED SEMICONDUCTORS - DEPENDENCE ON HOW THE SCATTERER IS EMBEDDED

被引：0

作者：

ENGSTROM, L

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 28期

关键词：

D O I：

10.1088/0022-3719/17/28/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4989 / 4999

页数：11

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