THE BOLTZMANN RESISTIVITY OF HEAVILY DOPED SEMICONDUCTORS - DEPENDENCE ON HOW THE SCATTERER IS EMBEDDED

被引：0
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作者：
ENGSTROM, L
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 28期
关键词：
D O I：
10.1088/0022-3719/17/28/015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：4989 / 4999
页数：11
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