THE BOLTZMANN RESISTIVITY OF HEAVILY DOPED SEMICONDUCTORS - DEPENDENCE ON HOW THE SCATTERER IS EMBEDDED

被引：0

作者：

ENGSTROM, L

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 28期

关键词：

D O I：

10.1088/0022-3719/17/28/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4989 / 4999

页数：11

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[1] TEMPERATURE DEPENDENCE OF RESISTIVITY IN HEAVILY DOPED SEMICONDUCTORS
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[2] MEASUREMENT OF RESISTIVITY OF HEAVILY DOPED SEMICONDUCTORS BY INDUCTIVE METHOD
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[3] NONUNIFORM STATE AND HYSTERESIS IN RESISTIVITY OF HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS
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[4] ANOMALOUS TEMPERATURE-DEPENDENCE OF RESISTIVITY IN HEAVILY DOPED GERMANIUM
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[5] APPARATUS FOR MEASURING RESISTIVITY AND HALL COEFFICIENT OF HEAVILY DOPED SEMICONDUCTORS AT HIGH TEMPERATURES
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[6] TEMPERATURE DEPENDENCE OF RESISTIVITY OF HEAVILY DOPED N-TYPE GAAS
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[7] TEMPERATURE DEPENDENCE OF RESISTIVITY OF DEGENERATELY DOPED SEMICONDUCTORS AT LOW TEMPERATURES
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[8] TEMPERATURE DEPENDENCE OF RESISTIVITY OF DEGENERATELY DOPED SEMICONDUCTORS FOR T [[ TD
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[9] DIFFUSION IN HEAVILY DOPED SEMICONDUCTORS
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[10] PRECIPITATES IN HEAVILY DOPED SEMICONDUCTORS
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