ANNEALING BEHAVIOR OF ION-IMPLANTED FE IN INP

被引:22
作者
SCHWARZ, SA
SCHWARTZ, B
SHENG, TT
SINGH, S
TELL, B
机构
[1] AT & T BELL LABS,MURRAY HILL,NJ 07974
[2] AT & T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.336040
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1698 / 1700
页数:3
相关论文
共 21 条
[1]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].
CHRISTEL, LA ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055
[2]  
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[3]  
CONNER JJ, 1980, J ELECTROCHEM SOC, V127, P1827
[4]   HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION [J].
DONNELLY, JP ;
HURWITZ, CE .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :475-478
[5]   SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT [J].
DUNCAN, S ;
SMITH, R ;
SYKES, DE ;
WALLS, JM .
VACUUM, 1984, 34 (1-2) :145-151
[6]   FURTHER EVIDENCE OF CHROMIUM, MANGANESE, IRON, AND ZINC REDISTRIBUTION IN INDIUM-PHOSPHIDE AFTER ANNEALING [J].
GAUNEAU, M ;
CHAPLAIN, R ;
RUPERT, A ;
RAO, EVK ;
DUHAMEL, N .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1029-1035
[7]   DEPTH PROFILES OF FE AND CR IMPLANTS IN INP AFTER ANNEALING [J].
GAUNEAU, M ;
LHARIDON, H ;
RUPERT, A ;
SALVI, M .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6823-6827
[8]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[9]   REDISTRIBUTION OF FE IN INP DURING LIQUID-PHASE EPITAXY [J].
HOLMES, DE ;
WILSON, RG ;
YU, PW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3396-3399
[10]   REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP [J].
KAMADA, H ;
SHINOYAMA, S ;
KATSUI, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2881-2884