A PROPOSED MECHANISM FOR RADIATIVE RECOMBINATION THROUGH SURFACE-STATES ON INP

被引:12
作者
LESTER, SD
KIM, TS
STREETMAN, BG
机构
关键词
D O I
10.1063/1.339379
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2950 / 2954
页数:5
相关论文
共 9 条
[1]   SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE [J].
CHANG, RR ;
IYER, R ;
LILE, DL .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1995-2004
[2]   VAPOR GROWTH OF INP FOR MESFETS [J].
CHEVRIER, J ;
ARMAND, M ;
HUBER, AM ;
LINH, NT .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :745-761
[3]   FREE AND BOUND ELECTRON TRANSITIONS TO ACCEPTORS IN INDIUM PHOSPHIDE [J].
FISCHBACH, JU ;
PILKUHN, MH ;
BENZ, G ;
STATH, N .
SOLID STATE COMMUNICATIONS, 1972, 11 (05) :725-+
[4]   PHOTOLUMINESCENCE STUDY OF HEAT-TREATED INP [J].
KIM, TS ;
LESTER, SD ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4598-4602
[5]   OBSERVATION OF RADIATIVE SURFACE-STATES ON INP [J].
KIM, TS ;
LESTER, SD ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2072-2074
[6]   ELECTRONIC-PROPERTIES OF THE INP(100) SURFACE [J].
MOISON, JM ;
BENSOUSSAN, M .
SURFACE SCIENCE, 1986, 168 (1-3) :68-73
[7]   ORIGIN OF SURFACE AND METAL-INDUCED INTERFACE STATES IN INP [J].
SHAPIRA, Y ;
BRILLSON, LJ ;
HELLER, A .
PHYSICAL REVIEW B, 1984, 29 (12) :6824-6832
[8]   RESIDUAL DONORS AND ACCEPTORS IN HIGH-PURITY GAAS AND INP GROWN BY HYDRIDE VPE [J].
SKROMME, BJ ;
LOW, TS ;
ROTH, TJ ;
STILLMAN, GE ;
KENNEDY, JK ;
ABROKWAH, JK .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :433-457
[9]  
WILMSEN CW, 1985, PHYSICS CHEM 3 5 COM