UV ABSORPTION OF ION-IMPLANTED SAPPHIRE

被引:34
|
作者
DALAL, ML
RAHMANI, M
TOWNSEND, PD
机构
关键词
D O I
10.1016/0168-583X(88)90181-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:61 / 65
页数:5
相关论文
共 50 条
  • [21] DICHROISM IN THE ABSORPTION-SPECTRUM OF PHOTOBLEACHED ION-IMPLANTED SILICA
    ALBERT, J
    MALO, B
    JOHNSON, DC
    BILODEAU, F
    HILL, KO
    BREBNER, JL
    KAJRYS, G
    OPTICS LETTERS, 1993, 18 (14) : 1126 - 1128
  • [22] Stress, hydration, and optical absorption in ion-implanted aluminum oxide
    Arnold, G.W.
    Materials Science and Engineering A, 1998, A253 (1-2): : 71 - 77
  • [23] Infrared absorption strengths of ion-implanted hydrogenated amorphous silicon
    Danesh, P.
    Pantchev, B.
    Schmidt, B.
    THIN SOLID FILMS, 2008, 516 (10) : 3383 - 3386
  • [24] OPTICAL-ABSORPTION OF ION-IMPLANTED AMORPHOUS-SILICON
    BHATIA, KL
    KRATSCHMER, W
    KALBITZER, S
    THIN SOLID FILMS, 1988, 163 : 331 - 335
  • [25] LOCALIZED VIBRATIONAL MODE ABSORPTION OF ION-IMPLANTED SILICON IN GAAS
    SKOLNIK, LH
    SPITZER, WG
    EULER, F
    HUNSPERG.RG
    KAHAN, A
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2146 - &
  • [26] Stress, hydration, and optical absorption in ion-implanted aluminum oxide
    Arnold, GW
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 71 - 77
  • [27] EFFECT OF HEAT-TREATMENT ON ELECTRICAL-PROPERTIES OF ION-IMPLANTED SILICON ON SAPPHIRE
    JASTRZEBSKI, L
    SMELTZER, RK
    CULLEN, GW
    LAGOWSKI, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1375 - 1378
  • [28] 55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates
    Katayose, Hideo
    Ohta, Masanao
    Nomoto, Kazuki
    Onojima, Norio
    Nakamura, Tohru
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2410 - 2412
  • [29] SUBGAP ABSORPTION STUDY OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 495 - 498
  • [30] Characterization of ion-implanted silica glass by vacuum ultraviolet absorption spectroscopy
    Hattori, M
    Nishihara, Y
    Ohki, Y
    Fujimaki, M
    Souno, T
    Nishikawa, H
    Yamaguchi, T
    Watanabe, E
    Oikawa, M
    Kamiya, T
    Arakawa, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 191 : 362 - 365