ELECTRICAL PROPERTIES AND RESONANCE SCATTERING IN HEAVILY DOPED N-TYPE GASB AND RELATED SEMICONDUCTORS

被引：7
作者：
LONG, D
HAGER, RJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 11期
关键词：
D O I：
10.1063/1.1703012
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3436 / &
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