MODIFIED BRIDGMAN FURNACE FOR GROWING CRYSTALS OF ALPHA-CSCL

被引：1
作者：
BEUTIN, B [1 ]
FELIX, FW [1 ]
MEIER, K [1 ]
机构：
[1] HAHN MEITNER INST NUCL RES BERLIN GMBH,GLIENICKER STR 100,D-1 BERLIN 39,WEST GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 04期
关键词：
D O I：
10.1016/0022-0248(74)90085-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：353 / 355
页数：3
相关论文
共 50 条
  • [31] FOR THE GROWTH OF 3 INCH D-SHAPED GAAS CRYSTALS BY A MODIFIED HORIZONTAL BRIDGMAN PROCESS
    HSIEH, MH
    CHIENG, CC
    LIE, KH
    GUO, YD
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART C-JOURNAL OF MECHANICAL ENGINEERING SCIENCE, 1993, 207 (03) : 185 - 195
  • [32] Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique
    Y. Cui
    M. Groza
    G. W. Wright
    U. N. Roy
    A. Burger
    L. Li
    F. Lu
    M. A. Black
    R. B. James
    Journal of Electronic Materials, 2006, 35 : 1267 - 1274
  • [33] Growth and characterization of ethyl 4-hydroxybenzoate single crystals by modified vertical Bridgman technique
    Solanki, S. Siva Bala
    Rajesh, N. P.
    Suthan, T.
    OPTICS AND LASER TECHNOLOGY, 2017, 93 : 143 - 148
  • [34] Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method
    Yu, Pengfei
    Jiang, Biru
    Chen, Yongren
    Lu, Hanyue
    Qi, Yongwu
    Liu, Yuanpei
    Ma, Zhefan
    Zheng, Jiahong
    Luan, Lijun
    Jie, Wanqi
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (13) : 10207 - 10212
  • [35] IR-DEVICE GRADE (HG, CD)TE CRYSTALS GROWN BY A MODIFIED BRIDGMAN METHOD
    BITTNER, H
    HOSCHL, P
    SCHUBERT, B
    CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (06) : 667 - 674
  • [36] MODIFIED KYROPOULOS METHOD FOR GROWING BAFCL SINGLE-CRYSTALS
    NICKLAUS, E
    FISCHER, F
    JOURNAL OF CRYSTAL GROWTH, 1972, 12 (04) : 337 - &
  • [37] Growing CuI crystals with decomplexation method modified by concentration programming
    Gu, M
    Wang, DX
    Huang, YT
    Zhang, R
    CRYSTAL RESEARCH AND TECHNOLOGY, 2004, 39 (12) : 1104 - 1107
  • [38] Characterization of Cd1-xZnxTe crystals grown from a modified vertical Bridgman technique
    Cui, Y.
    Groza, M.
    Wright, G. W.
    Roy, U. N.
    Burger, A.
    Li, L.
    Lu, F.
    Black, M. A.
    James, R. B.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) : 1267 - 1274
  • [39] Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method
    Pengfei Yu
    Biru Jiang
    Yongren Chen
    Hanyue Lu
    Yongwu Qi
    Yuanpei Liu
    Zhefan Ma
    Jiahong Zheng
    Lijun Luan
    Wanqi Jie
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 10207 - 10212
  • [40] Growth of BiSbTe3-mixed crystals using a Bridgman configuration of the TITUS furnace -: Numerical simulation of convection and segregation
    Seifert, W
    Reinshaus, P
    CRYSTAL RESEARCH AND TECHNOLOGY, 1999, 34 (04) : 467 - 480
12345