CAPLESS ANNEALING OF SILICON IMPLANTED GALLIUM-ARSENIDE

被引：11
作者：
GRANGE, JD
WICKENDEN, DK
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 04期
关键词：
D O I：
10.1016/0038-1101(83)90129-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：313 / 317
页数：5
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