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- [2] THE EFFECTS OF CAPLESS FACE-TO-FACE ANNEALING TEMPERATURE AND TIME ON THE PROPERTIES OF SILICON IMPLANTED GALLIUM-ARSENIDEADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 385 - 390PAZ, O
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- [5] LASER ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C362 - C362OLSON, GLANDERSON, CLDUNLAP, HLHESS, LDMCFARLANE, RAPEPPER, DMVAIDYANATHAN, KV
- [6] RAPID THERMAL ANNEALING OF IMPLANTED LAYERS IN SILICON-NITRIDE ENCAPSULATED GALLIUM-ARSENIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2560 - 2565WILSON, MRKOSEL, PBSHEN, YDWELCH, BM
- [7] CARBON IMPLANTED INTO GALLIUM-ARSENIDEJOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2765 - 2769VANBERLO, WH
- [9] GALLIUM-ARSENIDE ON SILICONELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609SHICHIJO, H
- [10] INFRARED PROPERTIES OF HEAVILY IMPLANTED SILICON, GERMANIUM AND GALLIUM-ARSENIDEPROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 463 : 46 - 55SPITZER, WGLIOU, LWANG, KWWADDELL, CNHUBLER, GKWUN, SI