INSITU OBSERVATION BY X-RAY SYNCHROTRON TOPOGRAPHY OF THE GROWTH OF PLASTICALLY DEFORMED REGIONS AROUND CRACK TIPS IN SILICON UNDER CREEP CONDITIONS

被引:20
作者
MICHOT, G [1 ]
GEORGE, A [1 ]
机构
[1] UNIV PARIS 11,LURE,BATIMENT 209C,F-91405 ORSAY,FRANCE
来源
SCRIPTA METALLURGICA | 1982年 / 16卷 / 05期
关键词
D O I
10.1016/0036-9748(82)90262-9
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:519 / 524
页数:6
相关论文
共 7 条
[1]   VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON [J].
GEORGE, A ;
CHAMPIER, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02) :529-540
[2]  
GEORGE A, UNPUB J APPL CRYST
[3]  
MICHOT G, 1980, PHILOS MAG A, V42, P195, DOI 10.1080/01418618009365810
[4]  
MICHOT G, UNPUB
[5]   X-RAY TOPOGRAPHY AND DYNAMICS - DESCRIPTION OF 2 EXPERIMENTS PERFORMED AT LURE DCI [J].
MILTAT, J .
NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01) :323-329
[6]   X-RAY TOPOGRAPHY SETTINGS - WHITE BEAM TOPOGRAPHY AND DIRECT VIEWING DETECTORS, 2-AXIS SPECTROMETER [J].
SAUVAGE, M .
NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01) :313-317
[7]  
STJOHN C, 1975, PHILOS MAG, V32, P1193, DOI 10.1080/14786437508228099