ATOMIC MODIFICATION OF AN SI(111)7X7 SURFACE WITH ADSORBED CHLORINE ATOMS USING A SCANNING TUNNELING MICROSCOPE

被引:10
|
作者
BABA, M
MATSUI, S
机构
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
关键词
D O I
10.1063/1.112819
中图分类号
O59 [应用物理学];
学科分类号
摘要
A scanning tunneling microscope is used to modify a Si(111)7x7 surface structure with adsorbed chlorine atoms. One Si adatom at the center site is extracted from the surface by field evaporation and the other atom is moved by field-induced diffusion. This modification is caused by the coordinated breaking of bonds and the moving of adatoms to their adjacent areas as the result of Cl chemical reactivity. (C) 1994 American Institute of Physics.
引用
收藏
页码:1927 / 1929
页数:3
相关论文
共 50 条
  • [1] ATOMIC DESORPTION AND READSORPTION OF CHLORINE ON A SI(111) 7X7 SURFACE WITH A SCANNING TUNNELING MICROSCOPE
    BABA, M
    MATSUI, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3716 - 3719
  • [2] Diffusion of chlorine atoms on Si(111)-(7x7) surface enhanced by electron injection from scanning tunneling microscope tips
    Nakamura, Y
    Mera, Y
    Maeda, K
    SURFACE SCIENCE, 2001, 487 (1-3) : 127 - 134
  • [3] DEPOSITION AND SUBSEQUENT REMOVAL OF SINGLE SI ATOMS ON THE SI(111)-7X7 SURFACE BY A SCANNING TUNNELING MICROSCOPE
    HUANG, DH
    UCHIDA, H
    AONO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2429 - 2433
  • [4] OBSERVATION OF DOMAIN BOUNDARIES ON THE SI(111) 7X7 SURFACE BY SCANNING TUNNELING MICROSCOPE
    SUMITA, I
    YOKOTSUKA, T
    TANAKA, H
    UDAGAWA, M
    WATANABE, Y
    TAKAO, M
    YOKOYAMA, K
    APPLIED PHYSICS LETTERS, 1990, 57 (13) : 1313 - 1315
  • [5] Desorption of chlorine atoms on Si(111)-(7x7) surfaces induced by hole injection from scanning tunneling microscope tips
    Nakamura, Yoshiaki
    Mera, Yutaka
    Maeda, Koji
    SURFACE SCIENCE, 2007, 601 (10) : 2189 - 2193
  • [6] Surface diffusion of adsorbed Si atoms on the Si(111)7x7 surface studied by atom-tracking scanning tunneling microscopy
    Sato, T
    Kitamura, S
    Iwatsuki, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (03): : 960 - 964
  • [7] Atomic-layer etching of a Br-saturated Si(111)-7x7 surface by using scanning tunneling microscope
    Mochiji, K
    Ichikawa, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (1AB): : L1 - L3
  • [8] FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(111)-7X7 USING A SCANNING TUNNELING MICROSCOPE (STM)
    HUANG, DH
    UCHIDA, H
    AONO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B): : 4501 - 4503
  • [9] Initial stage of oxidation on Si(111)-7x7 surface investigated by scanning tunneling microscope
    Ha, JS
    Park, KH
    Park, SJ
    Lee, EH
    IN SITU ELECTRON AND TUNNELING MICROSCOPY OF DYNAMIC PROCESSES, 1996, 404 : 205 - 210
  • [10] Surface dynamics and scanning tunneling microscopy: Diffusion of Pb atoms on Si(111)-(7x7)
    GomezRodriguez, JM
    Veuillen, JY
    Cinti, RC
    SURFACE REVIEW AND LETTERS, 1997, 4 (02) : 335 - 342