VISIBLE ELECTROLUMINESCENCE FROM P-TYPE CRYSTALLINE SILICON POROUS SILICON N-TYPE MICROCRYSTALLINE SILICON CARBON PN JUNCTION DIODES

被引：53
作者：
FUTAGI, T
MATSUMOTO, T
KATSUNO, M
OHTA, Y
MIMURA, H
KITAMURA, K
机构：
[1] Electronics Research Laboratories, Nippon Steel Corporation, Nakahara-ku, Kawasaki, 211
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期
关键词：
POROUS SI; MU-C-SIC; PN JUNCTION; ELECTROLUMINESCENCE; DIODE;
D O I：
10.1143/JJAP.31.L616
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated p-type crystalline silicon/porous silicon/microcrystalline silicon carbon pn junction diodes and demonstrated current-induced visible light emission. We observed two kinds of electroluminescence; one was a weak white emission at a forward current of about 90 mA, and the other was a strong orange-red one at a forward current from about 200 to 619 mA.
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页码：L616 / L618
页数：3
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