REDUCTION PHOTOLITHOGRAPHY BY ABLATION AT WAVELENGTH 193-NM

被引：6

作者：

GOODALL, FN ^{[1
]}

MOODY, RA ^{[1
]}

WELFORD, WT ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

来源：

OPTICS COMMUNICATIONS | 1986年 / 57卷 / 04期

关键词：

ABLATION; -; LASERS; EXCIMER; Applications; PHOTORESISTS;

D O I：

10.1016/0030-4018(86)90087-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An excimer laser operating at 193 nm was used with specially designed objectives of numerical apertures 0. 11 and 0. 17 to record photomasks on photoresist by direct ablation. Structure less than 0. 5 mu m in size was recorded clearly.

引用

页码：227 / 229

页数：3

共 50 条

[21] THE PHOTODISSOCIATION OF PHENYLSILANE AT 193-NM
BAGGOTT, JE
FREY, HM
LIGHTFOOT, PD
WALSH, R
CHEMICAL PHYSICS LETTERS, 1986, 125 (01) : 22 - 26
[22] Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning
Ridaoui, Hassan
Dirani, Ali
Soppera, Olivier
Ismailova, Esma
Brochon, Cyril
Schlatter, Guy
Hadziioannou, Georges
Tiron, Raluca
Bandelier, Philippe
Sourd, Claire
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2010, 48 (06) : 1271 - 1277
[23] EUVL mask inspection using 193-nm wavelength for 30-nm node and beyond
Na, Jihoon
Cho, Wonil
Kim, Tae-Geun
Kang, In-Yong
Cha, Byungcheol
Shin, Inkyun
Cho, Han-Ku
PHOTOMASK TECHNOLOGY 2011, 2011, 8166
[24] Human corneal ablation threshold using the 193-nm ArF excimer laser
Berns, MW
Chao, L
Giebel, AW
Liaw, LH
Andrews, J
VerSteeg, B
INVESTIGATIVE OPHTHALMOLOGY & VISUAL SCIENCE, 1999, 40 (05) : 826 - 830
[25] Outlook improving for 193-nm material
不详
SOLID STATE TECHNOLOGY, 1998, 41 (07) : 54 - +
[26] Advanced materials for 193-nm resists
Ushirogouchi, T
Asakawa, K
Shida, N
Okino, T
Saito, S
Funaki, Y
Takaragi, A
Tsutsumi, K
Nakano, T
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 1147 - 1156
[27] 193-nm multilayer imaging systems
Meador, JD
Holmes, D
DiMenne, WL
Nagatkina, M
Rich, M
Flaim, TD
Bennett, R
Kobayashi, I
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 948 - 959
[28] Protecting groups for 193-nm photoresists
Allen, RD
Sooriyakumaran, R
Opitz, J
Wallraff, GM
DiPietro, RA
Breyta, G
Hofer, DC
Kunz, RR
Jayaraman, S
Shick, R
Goodall, B
Okoroanyanwu, U
Willson, CG
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 : 334 - 343
[29] Europeans target 193-nm lithography
Moss, T
PHOTONICS SPECTRA, 1996, 30 (03) : 27 - 28
[30] Material Innovations for 193-nm Resists
Nozaki, Koji
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2010, 23 (06) : 795 - 801

← 1 2 3 4 5 →