NEW INTRINSIC GETTERING PROCESS IN SILICON BASED ON INTERACTIONS OF SILICON INTERSTITIALS

被引：27

作者：

NAUKA, K ^{[1
]}

LAGOWSKI, J ^{[1
]}

GATOS, HC ^{[1
]}

UEDA, O ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 621

页数：7

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