MULTIPLICATION NOISE IN MULTI-HETEROSTRUCTURE AVALANCHE PHOTO-DIODES

被引：10

作者：

RAKSHIT, S ^{[1
]}

CHAKRABORTI, NB ^{[1
]}

SARIN, R ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,CTR RADAR & COMMUN,KHARAGPUR 721302,W BENGAL,INDIA

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期

关键词：

D O I：

10.1016/0038-1101(83)90076-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：999 / 1003

页数：5

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