THEORY OF NEGATIVE-RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：8

作者：

MIZUNO, H

KANO, G

TAKAGI, H

TERAMOTO, I

机构：

[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN

[2] MATSUSHITA ELECTR CORP,BOARD MANAGEMENT,TAKATSUKI,OSAKA,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 02期

关键词：

D O I：

10.1109/JSSC.1976.1050720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 317

页数：5

共 8 条

[1] DISTRIBUTED GATE BISTABLE MOS TRANSISTOR [J].

FU, HS ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :799-+

[2] SYNTHESIS OF ELECTRONIC BISTABLE CIRCUITS [J].

HILL, LO ;

PEPPER, RS ;

PEDERSON, DO .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1963, CT10 (01) :25-&

[3] NEW LAMBDA-TYPE NEGATIVE-RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE [J].

KANO, G ;

IWASA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :448-449

[4] NEGATIVE-RESISTANCE OF A MODIFIED INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

LEHOVEC, K ;

ZULEEG, R .

PROCEEDINGS OF THE IEEE, 1974, 62 (08) :1163-1165

[5]

MARPHY BT, COMMUNICATION

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[7] COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES [J].

TAKAGI, H ;

KANO, G .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (06) :509-515

[8]

TERAZAWA K, 1954, SUGAKU GAIRON, P240

← 1 →