CYCLOTRON-RESONANCE OF LOCALIZED ELECTRONS ON A SI SURFACE

被引：68

作者：

KOTTHAUS, JP

ABSTREITER, G

KOCH, JF

RANVAUD, R

机构：

[1] TECH UNIV MUNICH,PHYS DEPT,8046 GARCHING,FED REP GER

[2] MAX PLANCK INST SOLID BODIES RES,HIGH FIELD MAGNET LAB,38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.34.151

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：151 / 154

页数：4

共 20 条

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[2]

ABSTREITER G, TO BE PUBLISHED

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TSUI, DC ;

DALTON, JV .

PHYSICAL REVIEW LETTERS, 1974, 32 (03) :107-110

[4]

ANDO T, 1974, 12TH P INT C PHYS SE, P724

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PHYSICAL REVIEW LETTERS, 1974, 32 (24) :1360-1363

[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

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PHYSICAL REVIEW, 1968, 169 (03) :619-+

[9] TRANSPORT PROPERTIES OF CONDUCTION ELECTRONS IN N-TYPE INVERSION LAYERS IN (100) SURFACES OF SILICON [J].

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (06) :723-740

[10] SUBHARMONIC STRUCTURE OF CYCLOTRON-RESONANCE IN AN INVERSION LAYER ON SI [J].

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ABSTREITER, G ;

KOCH, JF .

SOLID STATE COMMUNICATIONS, 1974, 15 (03) :517-519

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