EFFECTS OF LIGHT EXPOSURE DURING ANODIZATION ON PHOTOLUMINESCENCE OF POROUS SI

被引：19

作者：

ASANO, T ^{[1
]}

HIGA, K ^{[1
]}

AOKI, S ^{[1
]}

TONOUCHI, M ^{[1
]}

MIYASATO, T ^{[1
]}

机构：

[1] KYUSHU INST TECHNOL,CTR MICROELECTR SYST,IIZUKA,FUKUOKA 820,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4A期

关键词：

POROUS SILICON; PHOTOLUMINESCENCE; PHOTOANODIZATION;

D O I：

10.1143/JJAP.31.L373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence study has been carried out on porous Si which has been prepared from p-type Si wafers either by anodization under light illumination (photoanodization) or by anodization in the dark. It has been found that the photoanodization makes the luminescence peak wavelength shorter and the luminescence intensity stronger. As a result of these effects, visible red light luminescence has been reproducibly obtained. These effects have been found to be more pronounced when highly concentrated HF solutions are used for anodization. Scanning electron microscopy and Raman spectroscopy showed no distinct differences in microstructure or crystallinity between the photoanodized and in-dark anodized porous Si.

引用

页码：L373 / L375

页数：3

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