INTERNAL PHOTOEMISSION-STUDIES OF (GAIN)AS, (ALIN)AS SCHOTTKY DIODES AND (GAIN)AS/(ALIN)AS HETEROJUNCTION GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

HSIEH, KH ^{[1
]}

WICKS, G ^{[1
]}

CALAWA, AR ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：700 / 702

页数：3

共 7 条

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CHAN, EY ;

CARD, HC ;

TEICH, MC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (03) :373-381

[2] NISI2-SI INFRARED SCHOTTKY PHOTODETECTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

HARRISON, TR ;

JOHNSON, AM ;

TIEN, PK ;

DAYEM, AH .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :734-736

[3]

KOSONOCKY WF, 1980, SPIE IR IMAGE SENSOR, V225, P69

[4] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[5] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :118-120

[6]

RHODERICK RH, 1978, METAL SEMICONDUCTOR, pCH2

[7]

WILLIAMS R, 1970, SEMICONDUCTOR SEMIME, V8, P97

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