INFLUENCE OF SUBSTRATE MISORIENTATION ON SURFACE-MORPHOLOGY OF BE-DOPED GAAS GROWN BY MBE

被引：10

作者：

MOCHIZUKI, K

GOTO, S

KAKIBAYASHI, H

KUSANO, C

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

(411) a facet; Beryllium; Gallium arsenide; Molecular beam epitaxy; Surface morphology; Surface segregation;

D O I：

10.1143/JJAP.29.L1046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface morphology of MBE-grown Be-doped GaAs was studied by RHEED, SEM and TEM. (411) A facets were found on the (100) surface for Be 6×1019 cm-3 doping at a growth temperature of 630°C. The surface roughness due to this faceting was suppressed by misorienting the GaAs substrate from (100) toward (111)A; a 19.5° misorientation, i.e., a (411)A substrate, was found to be effective in realizing a smooth surface, even for Be 1×1020 cm-3 doping. © 1990 The Japan Society of Applied Physics.

引用

页码：L1046 / L1048

页数：3

共 6 条

[1] BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE [J].