EPITAXIAL GERMANIUM-SILICON STRUCTURES OBTAINED IN ULTRAHIGH-VACUUM

被引：10

作者：

ALEKSANDROV, LN ^{[1
]}

LOVYAGIN, RN ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 37卷 / 01期

关键词：

D O I：

10.1002/pssa.2210370142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：341 / 352

页数：12

共 18 条

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[3] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J].

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JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :298-301

[4] STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J].

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THIN SOLID FILMS, 1974, 20 (01) :1-10

[5]

ALEKSANDROV LN, 1972, MIKROELEKTRONIKA, V1, P120

[6]

ALEKSANDROV LN, 1974, OBZORY PO ELEKTRON T, V2, P193

[7] P-LAYERS ON VACUUM HEATED SILICON [J].

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[8] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J].

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JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :132-&

[9] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].

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SURFACE SCIENCE, 1969, 15 (01) :1-&

[10] LOW-TEMPERATURE EPITAXY OF GE FILMS BY SPUTTER DEPOSITION [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :14-19

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