LOCALIZED VIBRATIONAL MODES OF LITHIUM IN LITHIUM-DIFFUSED P-TYPE GAAS

被引：28

作者：

LORIMOR, OG

SPITZER, WG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.1710041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3008 / +

页数：1

共 22 条

[1] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[2]

COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024

[3] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2287-+

[4] ACCEPTORS IN DONOR-DOPED GAAS RESULTING FROM LI DIFFUSION [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :1914-&

[5]

FULLER CS, 1962, P INT C PHYS SEMICON, P745

[6] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J].

HASS, M ;

HENVIS, BW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1099-+

[7]

HAYES W, 1965, PHYS REV, V138, P1227

[8] LOCAL MODE ABSORPTION OF A1 AND P IN GAAS [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2509-&

[9] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3687-+

[10]

MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P11

← 1 2 3 →