THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS

被引：35
作者：
KUIKEN, HK [1 ]
机构：
[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 06期
关键词：
D O I：
10.1016/0038-1101(76)90004-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：447 / 450
页数：4
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BERZ F, 1975, COMMUNICATION
[4]   INJECTED CURRENT CARRIER TRANSPORT IN A SEMI-INFINITE SEMICONDUCTOR AND THE DETERMINATION OF LIFETIMES AND SURFACE RECOMBINATION VELOCITIES [J].
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[5]   MEASUREMENT OF SPATIAL VARIATIONS OF CARRIER LIFETIME IN SILICON POWER DEVICES [J].
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :671-+
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