THE SIO2-SI3N4 INTERFACE, .1. NATURE OF THE INTERPHASE

被引:62
作者
OGBUJI, LUJT [1 ]
BRYAN, SR [1 ]
机构
[1] PERKIN ELMER CORP,DIV PHYS ELECTR,EDEN PRAIRIE,MN 55344
关键词
D O I
10.1111/j.1151-2916.1995.tb08481.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recent reports in the literature have suggested that Si2N2O forms in the oxidation of Si3N4 as a buffer suboxide below the silica crust, and that equilibrium between SiO2 and Si3N4 requires the presence of this buffer. Here we report the examination of SiO2/Si3N4 boundaries of different genesis, by a variety of techniques, all of which failed to detect Si2N2O. What was found in each case is a graded suboxide whose composition merges seamlessly with the higher oxide above and the Si3N4 below. Part I presents the results of compositional depth profiling across the suboxide. In Part II a model is proposed to explain how O-2 diffusion in the graded suboxide limits Si3N4 oxidation kinetics.
引用
收藏
页码:1272 / 1278
页数:7
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