A PARAMETER EXTRACTION METHOD USING CUTOFF MEASUREMENT FOR A LARGE-SCALE HSPICE MODEL OF HBTS

被引：2

作者：

LEE, S

KANG, SW

机构：

[1] Semiconductor Devices Research Division, Electronics and Telecommunications Research Institute

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 01期

关键词：

D O I：

10.1109/16.259628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an accurate parameter extraction method for the HBT large-signal equivalent circuit model in which several extrinsic parasitics are connected to HSPICE BJT model. The measured Gummel plot are used to extract de model parameters of HBT using HSPICE. Capacitances are then obtained from S-parameter measurements of the HBT's biased to cutoff. The other parameters are determined from the active device S-parameters. The large-signal modeled Gummel plot and S-parameters shore good agreement with the measured ones, respectively.

引用

页码：112 / 114

页数：3

共 11 条

[1] BILBRO GL, 1990, IEEE T MICROWAVE THE, V38, P1381
[2] DIRECT EXTRACTION OF THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT
COSTA, D
LIU, WU
HARRIS, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) : 2018 - 2024
[3] Golio J. M., 1991, MICROWAVE MESFETS HE
[4] HUANG C, 1989, IEEE BIPOLAR CIRCUIT, P17
[5] PARAMETER EXTRACTION TECHNIQUE FOR HBT EQUIVALENT-CIRCUIT USING CUTOFF MODE MEASUREMENT
LEE, S
GOPINATH, A
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (03) : 574 - 577
[6] NEW CIRCUIT MODEL FOR RF PROBE PADS AND INTERCONNECTIONS FOR THE EXTRACTION OF HBT EQUIVALENT-CIRCUITS
LEE, SH
GOPINATH, A
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) : 521 - 523
[7] A LARGE-SIGNAL HSPICE MODEL FOR THE HETEROJUNCTION BIPOLAR-TRANSISTOR
MATSUNO, CT
SHARMA, AK
OKI, AK
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) : 1472 - 1474
[8] MEASUREMENT OF THE LOW-CURRENT BASE AND EMITTER RESISTANCES OF BIPOLAR-TRANSISTORS
NEUGROSCHEL, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 817 - 822
[9] A GUMMEL-POON MODEL FOR ABRUPT AND GRADED HETEROJUNCTION BIPOLAR-TRANSISTORS (HBTS)
RYUM, BR
ABDELMOTALEB, IM
[J]. SOLID-STATE ELECTRONICS, 1990, 33 (07) : 869 - 880
[10] TREW RJ, 1989, IEEE MTT S INTERMICR, P87

← 1 2 →