ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES

被引：81

作者：

LUDEKE, R

LANDGREN, G

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5526 / 5535

页数：10

共 30 条

[21] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS [J].

ROWE, JE ;

CHRISTMAN, SB ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1975, 35 (21) :1471-1475

[22] INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110) [J].

SKEATH, P ;

LINDAU, I ;

CHYE, PW ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1143-1148

[23] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY ;

CHYE, P .

PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423

[24]

TANG JYF, 1984, J VAC SCI TECHNOL B, V2, P459, DOI 10.1116/1.582895

[25] METAL-SEMICONDUCTOR INTERFACE - SI (111) AND ZINCBLENDE (110) JUNCTIONS [J].

TEJEDOR, C ;

FLORES, F ;

LOUIS, E .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (12) :2163-2177

[26] SCHOTTKY-BARRIER HEIGHTS AND THE CONTINUUM OF GAP STATES [J].

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1984, 52 (06) :465-468

[27]

VOGEL P, UNPUB

[28] CRITICAL DEVELOPMENT STAGES FOR THE REACTIVE CR-GAAS(110) INTERFACE [J].

WEAVER, JH ;

GRIONI, M ;

JOYCE, J .

PHYSICAL REVIEW B, 1985, 31 (08) :5348-5354

[29]

WERTHEIM GK, 1978, PHOTOEMISSION SOLIDS, V1, pCH5

[30] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE [J].

ZUR, A ;

MCGILL, TC ;

SMITH, DL .

PHYSICAL REVIEW B, 1983, 28 (04) :2060-2067

← 1 2 3 →