INTRINSIC AND EXTRINSIC RESPONSE OF GAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS

被引：22

作者：

KOSCIELNIAK, WC ^{[1
]}

PELOUARD, JL ^{[1
]}

LITTLEJOHN, MA ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 02期

关键词：

Metal-Semiconductor-Metal Photodetectors - Monte Carlo Simulation - MSM Devices;

D O I：

10.1109/68.47069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs metal-semiconductor-metal (MSM) photodetectors have been simulated using a self-consistent Monte Carlo (MC) method. Intrinsic device properties are discussed in terms of MC electron and hole transport under low illumination intensity. Parasitic circuit elements are then introduced to more closely model realistic devices using the MC results in a circuit simulator. Intrinsic devices with 0.5 and 1 μm spacing between fingers are dominated by stationary high-field transport. Surprisingly, full-width-half-maximum (FWHM) of 0.5 and 1 μm detectors with parasitics is 4.3 and 3.8 ps, respectively. However, the 1 μm detector exhibits a long hole tail and transient oscillations. Thus, FWHM results (and intrinsic device response) can be inadequate predictors of ultimate frequency response and scaling behavior. However, an estimate of maximum repetition frequency gives fmax = 92 GHz for the 0.5 μm device, consistent with experimental data. © 1990 IEEE

引用

页码：125 / 127

页数：3

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