APPLICATION OF STATISTICAL EXPERIMENT TO THE DEPOSITION OF SI3 N4 IN MICROELECTRONICS TECHNOLOGY

The deposition by plasma enhanced CVD (PECVD), is a widely used process to obtain silicon nitride films. This is due to the high growing rates obtained by this technique and the low temperatures needed for the growth. To stablish the effect on the deposition of each process variable, we need a great number of experiments. Instead of that, we could use a statistichal methodology; in order to obtain signifique results with a few number of experiments. From the different available experimental design methods we have chosen the Orthogonal Matrix design. Using the orthogonal design it could be analyzed a wide range of values for each variable. And, this is a first step to elucidate the reaction mechanism. The results obtained applying this methodology are in accordance with the previous works. However, we can also determine the importance of each variable on the process, in a first approximation.