共 50 条
- [1] ELECTROREFLECTION SPECTRA OF SURFACE OF ION-BOMBARDED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 460 - 464
- [2] EXPANSION IN ION-BOMBARDED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 835 - &
- [4] DEFECT DISTRIBUTIONS IN MEV ION-BOMBARDED SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 106 - 109
- [5] TRIBOLOGY OF ION-BOMBARDED SILICON FOR MICROMECHANICAL APPLICATIONS JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME, 1993, 115 (03): : 392 - 399
- [6] FORMATION OF DEFECTS IN ION-BOMBARDED SILICON BEYOND THE ION RANGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 289 - 291
- [8] EPR INVESTIGATION OF DEFECT FORMATION IN ION-BOMBARDED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1487 - +
- [9] AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2): : 405 - 408
- [10] THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ION-BOMBARDED SILICON PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 307 - 325