ANTISITE-RELATED DEFECTS IN PLASTICALLY DEFORMED GAAS

被引:45
作者
OMLING, P
WEBER, ER
SAMUELSON, L
机构
[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
[2] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 08期
关键词
D O I
10.1103/PhysRevB.33.5880
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5880 / 5883
页数:4
相关论文
共 22 条
[1]  
CHANG T, 1978, NBS SPEC PUBL, V260, P59
[2]  
FARVACQUE JL, 1985, J ELECTRON MATER A, V14, P373
[3]  
GOLTZENE A, 1985, J ELECTRON MATER A, V14, P937
[4]   OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J].
HOFMANN, DM ;
MEYER, BK ;
LOHSE, F ;
SPAETH, JM .
PHYSICAL REVIEW LETTERS, 1984, 53 (12) :1187-1190
[5]   STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J].
ISHIDA, T ;
MAEDA, K ;
TAKEUCHI, S .
APPLIED PHYSICS, 1980, 21 (03) :257-261
[6]  
LAGOWSKI J, 1985, J ELECTRON MATER A, V14, P73
[7]  
Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184
[8]   OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].
MARTIN, GM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748
[9]   PHOTOCONDUCTIVITY IN PLASTICALLY DEFORMED GAAS [J].
NAKATA, H ;
NINOMIYA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (06) :1912-1919
[10]  
NEWMAN RC, 1985, J ELECTRON MATER A, V14, P87