THE EFFECT OF DOPING ON FERMI LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE

被引：17

作者：

ZUR, A

MCGILL, TC

SMITH, DL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：608 / 609

页数：2

共 8 条

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ZUR A, 1983, SURF SCI

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ZUR A, UNPUB PHYS REV B