MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE

被引：23

作者：

HORIGUCHI, S

KIMURA, K

KAMON, K

MASHITA, M

SHIMAZU, M

MIHARA, M

ISHII, M

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 12期

关键词：

D O I：

10.1143/JJAP.25.L979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：L979 / L982

页数：4

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