GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE

被引:16
作者
UCHIYAMA, S
IGA, K
机构
关键词
D O I
10.1109/JQE.1984.1072277
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1117 / 1118
页数:2
相关论文
共 3 条
[1]   LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].
IGA, K ;
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ELECTRONICS LETTERS, 1983, 19 (13) :457-458
[2]   GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES [J].
OKUDA, H ;
SODA, H ;
MORIKI, K ;
MOTEGI, Y ;
IGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L563-L566
[3]   GAINASP-INP SURFACE EMITTING INJECTION-LASERS WITH SHORT CAVITY LENGTH [J].
SODA, H ;
MOTEGI, Y ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1035-1041