MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY

被引：102

作者：

FALICOV, LM

CUEVAS, M

机构：

来源：

PHYSICAL REVIEW | 1967年 / 164卷 / 03期

关键词：

D O I：

10.1103/PhysRev.164.1025

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1025 / &

共 13 条

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CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1021-&

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

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[7]

GIBSON AF, 1964, PROGRESS SEMICOND ED, V8

[8]

HERRING C, UNPUBLISHED RESULTS

[9]

MCKELVEY JP, 1966, SOLIDSTATE SEMICONDU, P271

[10]

MCKELVEY JP, 1966, SOLIDSTATE SEMICONDU, P315