PERIOD-ADDING CHAOS IN THE SI THYRISTOR

被引:0
作者
YASUDA, Y
HOH, K
机构
[1] YOKOHAMA NATL UNIV,DIV ELECT & COMP ENGN,YOKOHAMA,KANAGAWA 240,JAPAN
[2] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
来源
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART III-FUNDAMENTAL ELECTRONIC SCIENCE | 1994年 / 77卷 / 06期
关键词
CHAOS IN THE SEMICONDUCTOR DEVICE; THYRISTOR; FIRST RETURN MAP; PERIOD-ADDING CHAOS; INTERMITTENCY;
D O I
10.1002/ecjc.4430770610
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chaotic behaviors are observed in the anode current of the thyristors where their anodes were excited with an ac source and the constant de current was supplied to the gate. Three aspects of chaos, i.e., period-doubling bifurcation, intermittency, and period-adding chaotic sequence, are observed with different combinations of control parameters. This paper discusses primarily the feature of period-adding chaos accompanied with intermittency. Also reported is the structure of its bifurcation by using a simple first return map model constructed from the experimental results.
引用
收藏
页码:107 / 115
页数:9
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