HYDROGEN-PERMSELECTIVE SIO2 MEMBRANE FORMED IN PORES OF ALUMINA SUPPORT TUBE BY CHEMICAL-VAPOR-DEPOSITION WITH TETRAETHYL ORTHOSILICATE

被引:91
|
作者
YAN, SC
MAEDA, H
KUSAKABE, K
MOROOKA, S
AKIYAMA, Y
机构
[1] KYUSHU UNIV,DEPT CHEM SCI & TECHNOL,FUKUOKA 812,JAPAN
[2] KYUSHU UNIV,INST ADV MAT STUDY,KASUGA,FUKUOKA 816,JAPAN
关键词
D O I
10.1021/ie00033a011
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The outer surface of an alpha-alumina porous tube of 1.9-mm i.d. and 2.5-mm o.d. was coated with boehmite sol, which was calcined into a gamma-alumina layer of 1.5-2.5-mu m thickness. Then pores of the gamma-alumina layer (average pore size approximate to 7 nm) were filled with SiO2 formed by thermally activated chemical vapor deposition (CVD) of tetraethyl orthosilicate at 400-600 OC. The reactant was continuously evacuated through the porous support tube by keeping the pressure inside the support tube at 1.7-1.8 kPa initially. At the end of the modification, the pressure was reduced to 10 Pa. This procedure was effective in occluding pinholes that might be formed by other methods. A SiO2 film of 50-100-nm thick was also placed on the top of the porous gamma-alumina layer. The hydrogen permeability of the composite membrane was 10(-7)-10(-8) mol.m(-2).s(-1).Pa-1 at 600 degrees C, and the selectivity of H-2 to N-2 was higher than 1000. The membranes were stable in a steam atmosphere at 500 degrees C.
引用
收藏
页码:2096 / 2101
页数:6
相关论文
共 50 条
  • [41] Effect of hydrogen dilution on the remote plasma enhanced chemical vapor deposition of chlorinated SiO2 films
    Alonso, JC
    Vazquez, R
    Ortiz, A
    Pankov, V
    Andrade, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06): : 3211 - 3217
  • [42] POSSIBILITY OF REALIZING NEW STRUCTURES WITH INNER FINE ELECTRODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION REGROWTH ON AL/SIO2 WIRES
    NISHIBE, T
    FUNEMIZU, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 152 (04) : 351 - 353
  • [43] LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF HIGH-QUALITY SIO2 FILM USING HELICON PLASMA SOURCE
    NISHIMOTO, Y
    TOKUMASU, N
    MAEDA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 762 - 766
  • [44] SI/SIO2 INTERFACES FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 ON PLASMA-PROCESSED SI SUBSTRATES
    MA, Y
    YASUDA, T
    HABERMEHL, S
    LUCOVSKY, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 781 - 787
  • [45] DEFECT PASSIVATION IN MULTICRYSTALLINE-SI MATERIALS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2/SIN COATINGS
    CHEN, Z
    ROHATGI, A
    BELL, RO
    KALEJS, JP
    APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2078 - 2080
  • [46] Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition
    Kato, H
    Sakai, S
    Takami, A
    Ohki, Y
    Ishii, K
    PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL CONFERENCE ON CONDUCTION AND BREAKDOWN IN SOLID DIELECTRICS - ICSD '98, 1998, : 368 - 371
  • [47] IN-SITU, REAL-TIME OBSERVATION OF AL CHEMICAL-VAPOR-DEPOSITION ON SIO2 IN AN ENVIRONMENTAL TRANSMISSION ELECTRON-MICROSCOPE
    DRUCKER, J
    SHARMA, R
    WEISS, K
    KOUVETAKIS, J
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2846 - 2848
  • [48] IN-SITU, REAL-TIME OBSERVATION OF AL CHEMICAL-VAPOR-DEPOSITION ON SIO2 IN AN ENVIRONMENTAL TRANSMISSION ELECTRON-MICROSCOPE
    DRUCKER, J
    SHARMA, R
    WEISS, K
    KOUVETAKIS, J
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8198 - 8200
  • [49] IN-SITU DETECTION OF SURFACE SIHN IN SYNCHROTRON-RADIATION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF A-SI ON AN SIO2 SUBSTRATE
    YOSHIGOE, A
    NAGASONO, M
    MASE, K
    URISU, T
    SEKI, S
    NAKAGAWA, Y
    JOURNAL OF SYNCHROTRON RADIATION, 1995, 2 : 196 - 200
  • [50] Electrical properties of SiO2 films with embedded nanoparticles formed by SiH4/O2 chemical vapor deposition
    Rassel, RM
    Kim, T
    Shen, Z
    Campbell, SA
    McMurry, PH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2441 - 2447