ADMITTANCE SPECTROSCOPY AND TRAPPING PHENOMENA OF ZNO BASED VARISTORS

被引：31

作者：

CHIOU, BS ^{[1
]}

CHUNG, MC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 10期

关键词：

VARISTOR; ZNO; ADMITTANCE SPECTROSCOPY;

D O I：

10.1007/BF02665979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of ZnO varistors are investigated through admittance spectroscopy. The observed ac admittance dispersion is caused by the existence of two deep bulk trap levels, which are 0.31 eV and 0.245 eV, respectively, below the conduction band. The 0.31 eV level is associated with the oxygen vacancy while the origin of the 0.245 eV level is not yet clear. An equivalent circuit model for ZnO varistors is proposed that is based on the existence of deep bulk traps.

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页码：885 / 890

页数：6

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